7th International Workshop on Characterization and Modeling of Memory devices

September 29th – 30th, 2016

 

Università degli Studi di Milano-Bicocca
Building U6 | room M. Martini | floor -1
Piazza dell'Ateneo Nuovo 1, Milan, Italy

 

5 sessions - 2 days
29th - from 10.30 a.m. to 5.00 p.m.
30th - from 8.30 a.m. to 1.00 p.m.

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1st session: Phase change materials and devices

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Density functional simulations of phase change material / graphene heterostructures - Jaakko Akola, Tampere University - Finland (PDF 6 MB)

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Fragile-Strong behavior of telluride alloys and its importance for phase change application - Pierre Lucas, University of Arizona - USA (PDF 2 MB)

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2nd session: Phase change materials and devices

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials Investigated via Electrical Transport, Terahertz and Raman spectroscopy - Raffaella Calarco, PDI - Berlin - Germany (PDF 4,1 MB)

 

4th session: Magnetic and Ferroelectric Memories

 

First principles multi-scale theory for current-driven magnetization dynamics - Stefano Sanvito, Trinity College - Dublin - Ireland (PDF 8 MB)

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The negative aspects at the origin of hysteresis effects in FeFETs and niobium threshold switches - Stefan Slesazeck, NaMLab - Dresden - Germany (PDF 3 MB)

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5th session: Resistive Memories and Selectors

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Bi-directional Threshold Selector Devices for 3D X-point Memory - Hyunsang Hwang, Pohang University of Science and Technology Postech - Korea (PDF 8 MB)

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Visualization, modeling and control of filament growth in resistive-memories (RRAMs) towards commercial applications - Wei Lu, University of Michigan & Crossbar Inc. - USA (PDF 5 MB)

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Studying ReRAM memories at the nanoscale using the conductive AFM - Mario Lanza, Inst. of Functional Nano & Soft Materials of Soochow University - China (PDF 7 MB)

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Carbon-based resistive memories - Federico Zipoli, IBM Zurich - Switzerland (PDF 7 MB)